Henry Xin is a seasoned professional with over 20 years of extensive experience in the semiconductor industry, currently serving as a Sr. Principal Engineer in Foundry Engineering at Broadcom. His expertise spans a wide array of semiconductor technologies, from his foundational work on Gallium Arsenide...
Henry Xin is a seasoned professional with over 20 years of extensive experience in the semiconductor industry, currently serving as a Sr. Principal Engineer in Foundry Engineering at Broadcom. His expertise spans a wide array of semiconductor technologies, from his foundational work on Gallium Arsenide (GaAs) and Indium Phosphide (InP) during his PhD thesis to advanced materials such as Gallium Nitride (GaN), Silicon Lateral Double-Diffused MOSFETs (Si LDMOS), Silicon-Germanium (SiGe) BiCMOS, Radio-Frequency Silicon-On-Insulator (RFSOI), and cutting-edge CMOS technologies.
In his current role, Henry is instrumental in driving specialty process technology and selecting fabrication facilities for new product designs, ensuring seamless introduction and ramp-up of innovative semiconductor solutions. His hands-on experience with high-voltage CMOS, SiGe BiCMOS, and III-V HEMT processes allows him to navigate complex design challenges effectively. Henry also serves as a critical interface between foundries and chip design teams, facilitating mask tapeouts across various CMOS nodes, including 180nm, 130nm, 65nm, and 40nm technologies.
His deep understanding of semiconductor device characterization, simulations, and design of experiments positions him as a key contributor to R&D initiatives at Broadcom. Henry’s leadership in engineering management and his commitment to advancing semiconductor technology ensure that he remains at the forefront of innovation in this dynamic field. With a proven track record of successful project execution and a passion for developing next-generation semiconductor solutions, Henry Xin continues to make significant contributions to Broadcom and the broader semiconductor industry.
